| 항목 | SiO₂-SiC | SiSiC/RBSiC | R-SiC | Si3N4-SiC |
|---|---|---|---|---|
| SiC % | ＞85 | 90~92 | ＞99 | ≥75 |
| Density g/cm3 | 2.65~2.75 | >3.02 | 2.65～2.75 | 2.65～2.85 |
| Porosity % | 15~16 | <0.1 | 15-18 | 13-15 |
| Bending strength (20℃)Mpa | 90~100 | 260 | 80～100 | 160-180 |
| Bending strength (1200℃)Mpa | 100~110 | 280 | 90～110 | 170-180 |
| compressive strength (20℃)Mpa | ≥300 | 900 | ≥300 | 580 |
| Hardness Kg/mm2 | 1800~2000 | 2400 | 1800～2000 | 2000-3000 |
| Thermal Conductivity (1200℃)w.m-1.k-1 | 35~36 | 45 | 36 | 19.6 |
| Coefficient of thermal expansion(1200℃) | 4.6 | 4.5 | 4.6 | 4.7 |
| Maximum operation temperature ℃ | 1500 | 1380 | 1650 | 1550 |
Silicon Carbide Plate has high temperature resistance (over 1400°C), high hardness and wear resistance, low thermal conductivity and light weight, strong chemical stability and excellent thermal shock stability. It is suitable for high temperature, corrosion and wear resistance scenes, and its performance is better than traditional materials.
Silicon Carbide Plate is mainly used in industrial kilns (furnace linings, annealing furnaces, etc.), semiconductors (CVD equipment carrier plates), photovoltaics (high-temperature diffusion furnace components), mining and chemical industries (wear-resistant and corrosion-resistant linings/pump bodies), new energy (lithium battery sintering, high-temperature resistant parts for hydrogen energy equipment) and extreme precision manufacturing scenarios.